Dynamic conductance characteristics in HfOx-based resistive random access memory

Ying Chen Chen; Yao Feng Chang; Xiaohan Wu; Fei Zhou; Meiqi Guo; Chih Yang Lin; Cheng Chih Hsieh; Burt Fowler; Ting Chang Chang; Jack C. Lee

doi:10.1039/c7ra00567a

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Ying Chen Chen, Yao Feng Chang, Xiaohan Wu, Fei Zhou, Meiqi Guo, Chih Yang Lin, Cheng Chih Hsieh, Burt Fowler, Ting Chang Chang, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Characteristics of HfO_x-based resistive switching memory (RRAM) in Al/HfO_x/Al and Al/AlO_x/HfO_x/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlO_x/HfO_x/Al structure. No such RESET behavior was observed for the Al/HfO_x/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfO_x-based RRAM, but also helped clarifying the resistive switching mechanisms.

Original language	English (US)
Pages (from-to)	12984-12989
Number of pages	6
Journal	RSC Advances
Volume	7
Issue number	21
DOIs	https://doi.org/10.1039/c7ra00567a
State	Published - 2017
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

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10.1039/c7ra00567a

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title = "Dynamic conductance characteristics in HfOx-based resistive random access memory",

abstract = "Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.",

author = "Chen, \{Ying Chen\} and Chang, \{Yao Feng\} and Xiaohan Wu and Fei Zhou and Meiqi Guo and Lin, \{Chih Yang\} and Hsieh, \{Cheng Chih\} and Burt Fowler and Chang, \{Ting Chang\} and Lee, \{Jack C.\}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2017",

doi = "10.1039/c7ra00567a",

language = "English (US)",

volume = "7",

pages = "12984--12989",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "21",

}

TY - JOUR

T1 - Dynamic conductance characteristics in HfOx-based resistive random access memory

AU - Chen, Ying Chen

AU - Chang, Yao Feng

AU - Wu, Xiaohan

AU - Zhou, Fei

AU - Guo, Meiqi

AU - Lin, Chih Yang

AU - Hsieh, Cheng Chih

AU - Fowler, Burt

AU - Chang, Ting Chang

AU - Lee, Jack C.

PY - 2017

Y1 - 2017

N2 - Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.

AB - Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.

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U2 - 10.1039/c7ra00567a

DO - 10.1039/c7ra00567a

M3 - Article

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SN - 2046-2069

VL - 7

SP - 12984

EP - 12989

JO - RSC Advances

JF - RSC Advances

IS - 21

ER -

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Abstract

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