Dynamic conductance characteristics in HfOx-based resistive random access memory

Ying Chen Chen; Yao Feng Chang; Xiaohan Wu; Fei Zhou; Meiqi Guo; Chih Yang Lin; Cheng Chih Hsieh; Burt Fowler; Ting Chang Chang; Jack C. Lee

doi:10.1039/c7ra00567a

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Ying Chen Chen
, Yao Feng Chang
, Xiaohan Wu
, Fei Zhou
, Meiqi Guo
, Chih Yang Lin
, Cheng Chih Hsieh
, Burt Fowler
, Ting Chang Chang
, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Characteristics of HfO_x-based resistive switching memory (RRAM) in Al/HfO_x/Al and Al/AlO_x/HfO_x/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlO_x/HfO_x/Al structure. No such RESET behavior was observed for the Al/HfO_x/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfO_x-based RRAM, but also helped clarifying the resistive switching mechanisms.

Original language	English (US)
Pages (from-to)	12984-12989
Number of pages	6
Journal	RSC Advances
Volume	7
Issue number	21
DOIs	https://doi.org/10.1039/c7ra00567a
State	Published - 2017
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

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10.1039/c7ra00567a

Cite this

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title = "Dynamic conductance characteristics in HfOx-based resistive random access memory",

abstract = "Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.",

author = "Chen, \{Ying Chen\} and Chang, \{Yao Feng\} and Xiaohan Wu and Fei Zhou and Meiqi Guo and Lin, \{Chih Yang\} and Hsieh, \{Cheng Chih\} and Burt Fowler and Chang, \{Ting Chang\} and Lee, \{Jack C.\}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2017",

doi = "10.1039/c7ra00567a",

language = "English (US)",

volume = "7",

pages = "12984--12989",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "21",

}

TY - JOUR

T1 - Dynamic conductance characteristics in HfOx-based resistive random access memory

AU - Chen, Ying Chen

AU - Chang, Yao Feng

AU - Wu, Xiaohan

AU - Zhou, Fei

AU - Guo, Meiqi

AU - Lin, Chih Yang

AU - Hsieh, Cheng Chih

AU - Fowler, Burt

AU - Chang, Ting Chang

AU - Lee, Jack C.

PY - 2017

Y1 - 2017

N2 - Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.

AB - Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.

UR - https://www.scopus.com/pages/publications/85014185017

UR - https://www.scopus.com/pages/publications/85014185017#tab=citedBy

U2 - 10.1039/c7ra00567a

DO - 10.1039/c7ra00567a

M3 - Article

AN - SCOPUS:85014185017

SN - 2046-2069

VL - 7

SP - 12984

EP - 12989

JO - RSC Advances

JF - RSC Advances

IS - 21

ER -

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Abstract

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