Dynamic conductance characteristics in HfOx-based resistive random access memory

Ying Chen Chen, Yao Feng Chang, Xiaohan Wu, Fei Zhou, Meiqi Guo, Chih Yang Lin, Cheng Chih Hsieh, Burt Fowler, Ting Chang Chang, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results indicated that defects at the oxide interface caused cycling issues in the Al/AlOx/HfOx/Al structure. No such RESET behavior was observed for the Al/HfOx/Al structure. Current induced over-heating, which caused an early RESET event, could be avoided using current-sweep technique that caused less electrical and thermal stress in localized regions. The experimental results not only provided insights into potential reliability issues and power management in HfOx-based RRAM, but also helped clarifying the resistive switching mechanisms.

Original languageEnglish (US)
Pages (from-to)12984-12989
Number of pages6
JournalRSC Advances
Issue number21
StatePublished - 2017
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering


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