Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

Sungjun Kim, Chih Yang Lin, Min Hwi Kim, Tae Hyeon Kim, Hyungjin Kim, Ying Chen Chen, Yao Feng Chang, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VOxlayer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOylayer. 1.5-nm-thick AlOylayer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.

Original languageEnglish (US)
Article number252
JournalNanoscale Research Letters
Volume13
DOIs
StatePublished - 2018
Externally publishedYes

Keywords

  • Memory
  • Nonlinearity
  • Resistive switching
  • Selector
  • Silicon oxide
  • Vanadium

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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