The dual-functional resistive random-access memories (RRAMs) are presented as the nonvolatile switching (NVS) memory and volatile threshold switching (VTS) devices by changing the operation polarities in the identical memory device. The built-in nonlinearity is demonstrated of102 in NVS for the selectorless memristor, and the selectivity is of 103 in volatile switching for the selector device application. The crossbar array of HfOx/graphite stacks is implementing an improved read margin with nonvolatile selectorless unit. In comparison with current memory technology, the dual-functional hybrid selectorless memristor in this work is presented by low thermal budget, high ON- OFF ratio (102), good self-selectivity in selectorless memory (1012), high selectivity in selection device (103), and low switching voltage for both memory and selection devices. The dual-functional switching behaviors not only provide the effective ways to 3-D integration for storage class memory, but also for emerging computing paradigms such as in-memory computing and neuromorphic computing applications.
- Resistive random-access memory (RRAM)
- resistive switching
- sneak path current
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering