Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates

David Q. Kelly; Joseph P. Donnelly; Sachin V. Joshi; Sagnik Dey; Domingo I.García Gutiérrez; Miguel José Yacamán; Sanjay K. Banerjee

Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates

David Q. Kelly, Joseph P. Donnelly, Sachin V. Joshi, Sagnik Dey, Domingo I.García Gutiérrez, Miguel José Yacamán, Sanjay K. Banerjee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

High-κ/metal gate pMOSFETs were fabricated on high-quality Ge _1-xC_x for the first time. Ge_1-xC_x layers with very low RMS roughness of ∼3Å were grown directly on Si by ultra-high-vacuum chemical vapor deposition (UHVCVD), without the use of relaxed Si_1-xGe_x virtual substrates. Ge _1-xC_x buried-channel (BC) and surface-channel (SC) pMOSFETs with EOT=1.9nm and L=10μm exhibited high drive currents of 10.8 and 15.2 μA/μm, respectively, for V_GS-V_T = -1.0V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in I_Dsat and 1.6× enhancement in the transconductance (G _m). The corresponding enhancements for the SC devices were 3× and 2×, respectively. These results represented an effective hole mobility enhancement of ∼1.5× for the BC devices and ∼2.5× for the SC devices over the universal curve for Si.

Original language	English (US)
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	902-905
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: Dec 5 2005 → Dec 7 2005

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	12/5/05 → 12/7/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Kelly, D. Q., Donnelly, J. P., Joshi, S. V., Dey, S., Gutiérrez, D. I. G., Yacamán, M. J., & Banerjee, S. K. (2005). Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 902-905). Article 1609504 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates. / Kelly, David Q.; Donnelly, Joseph P.; Joshi, Sachin V. et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 902-905 1609504 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kelly, DQ, Donnelly, JP, Joshi, SV, Dey, S, Gutiérrez, DIG, Yacamán, MJ & Banerjee, SK 2005, Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609504, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 902-905, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 12/5/05.

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title = "Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates",

abstract = "High-κ/metal gate pMOSFETs were fabricated on high-quality Ge 1-xCx for the first time. Ge1-xCx layers with very low RMS roughness of ∼3{\AA} were grown directly on Si by ultra-high-vacuum chemical vapor deposition (UHVCVD), without the use of relaxed Si1-xGex virtual substrates. Ge 1-xCx buried-channel (BC) and surface-channel (SC) pMOSFETs with EOT=1.9nm and L=10μm exhibited high drive currents of 10.8 and 15.2 μA/μm, respectively, for VGS-VT = -1.0V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in IDsat and 1.6× enhancement in the transconductance (G m). The corresponding enhancements for the SC devices were 3× and 2×, respectively. These results represented an effective hole mobility enhancement of ∼1.5× for the BC devices and ∼2.5× for the SC devices over the universal curve for Si.",

author = "Kelly, {David Q.} and Donnelly, {Joseph P.} and Joshi, {Sachin V.} and Sagnik Dey and Guti{\'e}rrez, {Domingo I.Garc{\'i}a} and Yacam{\'a}n, {Miguel Jos{\'e}} and Banerjee, {Sanjay K.}",

year = "2005",

language = "English (US)",

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AU - Kelly, David Q.

AU - Donnelly, Joseph P.

AU - Joshi, Sachin V.

AU - Dey, Sagnik

AU - Gutiérrez, Domingo I.García

AU - Yacamán, Miguel José

AU - Banerjee, Sanjay K.

PY - 2005

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N2 - High-κ/metal gate pMOSFETs were fabricated on high-quality Ge 1-xCx for the first time. Ge1-xCx layers with very low RMS roughness of ∼3Å were grown directly on Si by ultra-high-vacuum chemical vapor deposition (UHVCVD), without the use of relaxed Si1-xGex virtual substrates. Ge 1-xCx buried-channel (BC) and surface-channel (SC) pMOSFETs with EOT=1.9nm and L=10μm exhibited high drive currents of 10.8 and 15.2 μA/μm, respectively, for VGS-VT = -1.0V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in IDsat and 1.6× enhancement in the transconductance (G m). The corresponding enhancements for the SC devices were 3× and 2×, respectively. These results represented an effective hole mobility enhancement of ∼1.5× for the BC devices and ∼2.5× for the SC devices over the universal curve for Si.

AB - High-κ/metal gate pMOSFETs were fabricated on high-quality Ge 1-xCx for the first time. Ge1-xCx layers with very low RMS roughness of ∼3Å were grown directly on Si by ultra-high-vacuum chemical vapor deposition (UHVCVD), without the use of relaxed Si1-xGex virtual substrates. Ge 1-xCx buried-channel (BC) and surface-channel (SC) pMOSFETs with EOT=1.9nm and L=10μm exhibited high drive currents of 10.8 and 15.2 μA/μm, respectively, for VGS-VT = -1.0V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in IDsat and 1.6× enhancement in the transconductance (G m). The corresponding enhancements for the SC devices were 3× and 2×, respectively. These results represented an effective hole mobility enhancement of ∼1.5× for the BC devices and ∼2.5× for the SC devices over the universal curve for Si.

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BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

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ER -

Drive current enhancement in high-κ/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates

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