Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

A. A. Khajetoorians; J. Li; C. K. Shih; X. D. Wang; D. Garcia-Gutierrez; M. Jose-Yacaman; D. Pham; H. Celio; A. Diebold

doi:10.1063/1.2434000

Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

A. A. Khajetoorians, J. Li, C. K. Shih, X. D. Wang, D. Garcia-Gutierrez, M. Jose-Yacaman, D. Pham, H. Celio, A. Diebold

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Scanning capacitance microscopy studies of processed fin structures for fin field-effect transistor (FinFET) are presented. We characterized carrier profiling of fins as a function of implantation conditions. The results are confirmed by high angle annular dark field transmission electron microscopy study and qualitatively agree with simulations. The techniques we report can be used in conjunction with implantation and simulation to characterize the dopant profile of FinFET structures and further optimize FinFET processing parameters.

Original language	English (US)
Article number	034505
Journal	Journal of Applied Physics
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.2434000
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2434000

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@article{6cc52c1418de4678bd822052890fab4c,

title = "Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy",

abstract = "Scanning capacitance microscopy studies of processed fin structures for fin field-effect transistor (FinFET) are presented. We characterized carrier profiling of fins as a function of implantation conditions. The results are confirmed by high angle annular dark field transmission electron microscopy study and qualitatively agree with simulations. The techniques we report can be used in conjunction with implantation and simulation to characterize the dopant profile of FinFET structures and further optimize FinFET processing parameters.",

author = "Khajetoorians, {A. A.} and J. Li and Shih, {C. K.} and Wang, {X. D.} and D. Garcia-Gutierrez and M. Jose-Yacaman and D. Pham and H. Celio and A. Diebold",

note = "Funding Information: Special thanks to Dr. Banerjee at University of Texas at Austin for the discussion. This project was funded by the AMRC collaboration between the University of Texas and International SEMATECH and by NSF IGERT grant # DGE-054917. ",

year = "2007",

doi = "10.1063/1.2434000",

language = "English (US)",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

AU - Khajetoorians, A. A.

AU - Li, J.

AU - Shih, C. K.

AU - Wang, X. D.

AU - Garcia-Gutierrez, D.

AU - Jose-Yacaman, M.

AU - Pham, D.

AU - Celio, H.

AU - Diebold, A.

N1 - Funding Information: Special thanks to Dr. Banerjee at University of Texas at Austin for the discussion. This project was funded by the AMRC collaboration between the University of Texas and International SEMATECH and by NSF IGERT grant # DGE-054917.

PY - 2007

Y1 - 2007

N2 - Scanning capacitance microscopy studies of processed fin structures for fin field-effect transistor (FinFET) are presented. We characterized carrier profiling of fins as a function of implantation conditions. The results are confirmed by high angle annular dark field transmission electron microscopy study and qualitatively agree with simulations. The techniques we report can be used in conjunction with implantation and simulation to characterize the dopant profile of FinFET structures and further optimize FinFET processing parameters.

AB - Scanning capacitance microscopy studies of processed fin structures for fin field-effect transistor (FinFET) are presented. We characterized carrier profiling of fins as a function of implantation conditions. The results are confirmed by high angle annular dark field transmission electron microscopy study and qualitatively agree with simulations. The techniques we report can be used in conjunction with implantation and simulation to characterize the dopant profile of FinFET structures and further optimize FinFET processing parameters.

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U2 - 10.1063/1.2434000

DO - 10.1063/1.2434000

M3 - Article

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VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 034505

ER -

Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

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