Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

Ying Chen Chen; Yifu Huang; Sumant Sarkar; John Gibbs; Jack Lee

doi:10.3390/jlpea12040055

Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

Ying Chen Chen, Yifu Huang, Sumant Sarkar, John Gibbs, Jack Lee

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO_x) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10³ with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WO_x selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.

Original language	English (US)
Article number	55
Journal	Journal of Low Power Electronics and Applications
Volume	12
Issue number	4
DOIs	https://doi.org/10.3390/jlpea12040055
State	Published - Dec 2022

Keywords

RRAM
helices
memristor
selector
volatile switching

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.3390/jlpea12040055

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title = "Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications",

abstract = "In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WOx) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 103 with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WOx selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.",

keywords = "RRAM, helices, memristor, selector, volatile switching",

author = "Chen, \{Ying Chen\} and Yifu Huang and Sumant Sarkar and John Gibbs and Jack Lee",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = dec,

doi = "10.3390/jlpea12040055",

language = "English (US)",

volume = "12",

journal = "Journal of Low Power Electronics and Applications",

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TY - JOUR

T1 - Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

AU - Chen, Ying Chen

AU - Huang, Yifu

AU - Sarkar, Sumant

AU - Gibbs, John

AU - Lee, Jack

PY - 2022/12

Y1 - 2022/12

N2 - In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WOx) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 103 with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WOx selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.

AB - In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WOx) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 103 with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WOx selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.

KW - RRAM

KW - helices

KW - memristor

KW - selector

KW - volatile switching

UR - https://www.scopus.com/pages/publications/85144699883

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U2 - 10.3390/jlpea12040055

DO - 10.3390/jlpea12040055

M3 - Article

AN - SCOPUS:85144699883

SN - 2079-9268

VL - 12

JO - Journal of Low Power Electronics and Applications

JF - Journal of Low Power Electronics and Applications

IS - 4

M1 - 55

ER -

Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

Abstract

Keywords

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