Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

Keyphrases

• Annealing 100%
• Recrystallization 100%
• End of Range Defects 100%
• High Energy 50%
• Further Analysis 50%
• Diffusion Control 50%
• X Ray Diffraction 50%
• Compressive Strain 50%
• P-type 50%
• Chemical Effect 50%
• Diffusion Profile 50%
• Enhanced Diffusion 50%
• Electrical Performance 50%
• Beam-beam 50%
• Interstitial Clusters 50%
• Amorphous Interface 50%
• Beam Stability 50%
• Dopant Activation 50%
• P-n Junction 50%
• Beam Current 50%
• Complex Diffusion 50%
• Cross-sectional Transmission Electron Microscopy 50%
• Junction Formation 50%
• High-intensity Beam 50%
• B-doped 50%
• Shallow Junction 50%
• Rapid Thermal Annealing 50%
• Current Stability 50%
• Defect Formation 50%

Engineering

• Defects 100%
• Implanted Sample 50%
• Transmissions 25%
• Ray Diffraction 25%
• Compressive Strain 25%
• Enhanced Diffusion 25%
• Electrical Performance 25%
• Co-Doping 25%
• Implant 25%
• Junction Formation 25%
• Chemical Effect 25%
• Dopant Activation 25%
• Shallow Junction 25%
• Rapid Thermal Annealing 25%

Material Science

• Crystalline Material 100%
• Annealing 100%
• Amorphous Material 33%
• Transmission Electron Microscopy 33%
• X-Ray Diffraction 33%
• Doping (Additives) 33%
• Point Defect 33%