Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

Ying Chen Chen, Chih Yang Lin, Hyojong Cho, Sungjun Kim, Burt Fowler, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications.

Original languageEnglish (US)
Pages (from-to)3499-3503
Number of pages5
JournalJournal of Electronic Materials
Issue number6
StatePublished - Jun 1 2020
Externally publishedYes


  • RRAM
  • crosspoint
  • oxide
  • selectorless
  • sneak path current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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