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Concurrent events of memory and threshold switching in Ag/SiN
x
/Si devices
Sungjun Kim
, Min Hwi Kim
, Tae Hyeon Kim
, Ying Chen Chen
, Yao Feng Chang
, Muhammad Ismail
, Yoon Kim
, Kyung Chang Ryoo
, Byung Gook Park
Research output
:
Contribution to journal
›
Article
›
peer-review
6
Scopus citations
Overview
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x
/Si devices'. Together they form a unique fingerprint.
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Keyphrases
Ag Filament
25%
Bipolar Memory
25%
Compliance Current
50%
Concurrent Events
100%
Current Limiting
50%
Device Design
25%
High Compliance
25%
Low Compliance
25%
Low Current
25%
Low Power
25%
Memory Switching
100%
Mode Switch
25%
Non-volatile
25%
Pulse Amplitude
25%
Pulse Switching
25%
Si Devices
100%
Simultaneous Detection
25%
Single Device
25%
SiNx
100%
Sweeping
25%
Switching Behavior
25%
Switching Memory
25%
Threshold Switching
100%
Two-mode
25%
Engineering
Current Limit
50%
Pulse Amplitude
25%
Si Device
100%
Simultaneous Detection
25%
Switching Threshold
100%
Material Science
Mechanical Strength
100%
Neuroscience
Behavior (Neuroscience)
100%