Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
- Sungjun Kim
- , Min Hwi Kim
- , Tae Hyeon Kim
- , Ying Chen Chen
- , Yao Feng Chang
- , Muhammad Ismail
- , Yoon Kim
- , Kyung Chang Ryoo
- , Byung Gook Park
Research output: Contribution to journal › Article › peer-review
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