Concurrent events of memory and threshold switching in Ag/SiNx/Si devices

Sungjun Kim, Min Hwi Kim, Tae Hyeon Kim, Ying Chen Chen, Yao Feng Chang, Muhammad Ismail, Yoon Kim, Kyung Chang Ryoo, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p++-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 μA while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiNx determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p++-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design.

Original languageEnglish (US)
Article number051203
JournalJournal of Vacuum Science and Technology B
Issue number5
StatePublished - Sep 1 2018
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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