Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Ying Chen Chen; Yao Feng Chang; Burt Fowler; Fei Zhou; Xiaohan Wu; Cheng Chih Hsieh; Heng Lu Chang; Chih Hung Pan; Min Chen Chen; Kuan Chang Chang; Tsung Ming Tsai; Ting Chang Chang; Jack C. Lee

doi:10.1109/VLSI-TSA.2016.7480497

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Ying Chen Chen, Yao Feng Chang, Burt Fowler, Fei Zhou, Xiaohan Wu, Cheng Chih Hsieh, Heng Lu Chang, Chih Hung Pan, Min Chen Chen, Kuan Chang Chang, Tsung Ming Tsai, Ting Chang Chang, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (< 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.

Original language	English (US)
Title of host publication	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467394789
DOIs	https://doi.org/10.1109/VLSI-TSA.2016.7480497
State	Published - May 27 2016
Externally published	Yes
Event	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan, Province of China Duration: Apr 25 2016 → Apr 27 2016

Publication series

Name	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

Conference	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/25/16 → 4/27/16

Keywords

Low Voltage Operation
ReRAM
SiOx
Unipolar

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/VLSI-TSA.2016.7480497

Cite this

Chen, Y. C., Chang, Y. F., Fowler, B., Zhou, F., Wu, X., Hsieh, C. C., Chang, H. L., Pan, C. H., Chen, M. C., Chang, K. C., Tsai, T. M., Chang, T. C., & Lee, J. C. (2016). Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 Article 7480497 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2016.7480497

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation. / Chen, Ying Chen; Chang, Yao Feng; Fowler, Burt et al.
2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7480497 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, YC, Chang, YF, Fowler, B, Zhou, F, Wu, X, Hsieh, CC, Chang, HL, Pan, CH, Chen, MC, Chang, KC, Tsai, TM, Chang, TC & Lee, JC 2016, Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation. in 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016., 7480497, 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, Institute of Electrical and Electronics Engineers Inc., International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, Hsinchu, Taiwan, Province of China, 4/25/16. https://doi.org/10.1109/VLSI-TSA.2016.7480497

Chen YC, Chang YF, Fowler B, Zhou F, Wu X, Hsieh CC et al. Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7480497. (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). doi: 10.1109/VLSI-TSA.2016.7480497

Chen, Ying Chen ; Chang, Yao Feng ; Fowler, Burt et al. / Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation. 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

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title = "Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation",

abstract = "Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (< 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.",

keywords = "Low Voltage Operation, ReRAM, SiOx, Unipolar",

author = "Chen, \{Ying Chen\} and Chang, \{Yao Feng\} and Burt Fowler and Fei Zhou and Xiaohan Wu and Hsieh, \{Cheng Chih\} and Chang, \{Heng Lu\} and Pan, \{Chih Hung\} and Chen, \{Min Chen\} and Chang, \{Kuan Chang\} and Tsai, \{Tsung Ming\} and Chang, \{Ting Chang\} and Lee, \{Jack C.\}",

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AU - Chen, Ying Chen

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AU - Wu, Xiaohan

AU - Hsieh, Cheng Chih

AU - Chang, Heng Lu

AU - Pan, Chih Hung

AU - Chen, Min Chen

AU - Chang, Kuan Chang

AU - Tsai, Tsung Ming

AU - Chang, Ting Chang

AU - Lee, Jack C.

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AB - Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (< 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.

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Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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