Characterization of SiOx/HfOx bilayer resistive-switching memory devices

Ying Chen Chen, Yao Feng Chang, Xiaohan Wu, Meiqi Guo, Burt Fowler, Fei Zhou, Chih Hung Pan, Ting Chang Chang, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Oxide based resistive switching memory (ReRAM or RRAM) is a class of promising candidates for future non-volatile memory due to its fast programing, low power operation, and scalability. Among them, SiOx single layer resistive switching (RS) devices have been widely studied and characterized. The SiOx single layer resistive memory has excellent compatibility to CMOS fabrication process. However, it can only be programmed under vacuum or non-oxidized ambient. Also, previous results reported on SiOx-based memristors indicate that the electroforming and programming voltages are relatively high, especially for low-power applications. In this work, by using SiOx/HfOx stacked structures, we have developed a low-voltage operation (< 2V) for SiOx-based ReRAM. The results show that with HfOx (3nm) on bottom, the metal-insulator-semiconductor (MIS) structures exhibit resistive switching at low voltage (< 2V) and operation in air atmosphere. The added hafnium layer is believed to provide a source to proton exchange reaction with conduction bandgap offset reduction for low-voltage (< 2V) RS. Furthermore, we have studied single HfOx-based MIS devices which exhibit bipolar-type resistive switching behaviors with small memory window. Clearly, SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also reduces the switching voltage below 2V.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsD. Misra, D. Bauza, Z. Chen, K. B. Sundaram, Y. S. Obeng, T. Chikyow, H. Iwai
PublisherElectrochemical Society Inc.
Pages25-33
Number of pages9
Edition2
ISBN (Electronic)9781607687122
DOIs
StatePublished - 2016
Externally publishedYes
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: May 29 2016Jun 2 2016

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period5/29/166/2/16

ASJC Scopus subject areas

  • General Engineering

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