We report experimental evidence for the segregation and preferential localization of C atoms at the surface and substrate interfaces in thin Ge 1-xC x, films deposited directly on Si (100). The results are interpreted in the context of C segregation providing a mechanism for strain relaxation. Four different experimental techniques, including energy-dispersive spectroscopy, electron energy loss spectroscopy (EELS), energy-filtering transmission electron microscopy, and secondary ion mass spectrometry, support our claims. The EELS analyses showed that the C bonding near the Ge 1-xC x/Si substrate interface presented a higher sp 3 character than in the central region or at the surface. Two interpretations are given for this observation; one is that structural relaxation occurs when C atoms occupy substitutional sites in the Ge crystal closer to the Ge 1-xC x/Si substrate interface; the other is that the higher sp 3 character of the C atoms might be an indication that C-containing tetrahedral interstitial complexes form at the interface (chemical relaxation).
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - 2006|
ASJC Scopus subject areas
- Physics and Astronomy(all)