Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering

Ying Chen Chen, Yao Feng Chang, Chih Yang Lin, Xiaohan Wu, Gaobo Xu, Burt Fowler, Ting Chang Chang, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

The sneak-path leakage current issue is one of the severe hindrances for the application of high density resistive random access memory (RRAM) array design. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing internal filament location with low effective dielectric constant intending in HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without additional selector device to solve the sneak-path issue with switching voltage ~1 V, which is desirable for low power operating in built-in nonlinearity crossbar array configuration.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsA. P. Abbott, R. Alkire, P. Allongue, T. J. Anderson, P. N. Bartlett, M. Bayachou, S. Bhansali, N. Birbilis, A. B. Bocarsly, C. Bock, O. V. Boltalina, S. Brankovic, R. Buchheit, D. A. Buttry, S. Calabrese Barton, M. T. Carter, V. Chaitanya, G. T. Cheek, Z. Chen, D. Chidambaram, B. A. Chin, J. W. Choi, D. Chu, D. E. Cliffel, H. Deligianni, V. Di Noto, N. Dimitrov, M. Doeff, E. A. Douglas, T. Druffel, K. Edstrom, J. M. Fenton, J. Fergus, J. Fransaer, Y. Fukunaka, D. Guyomard, H. Hamada, L. M. Haverhals, P. Hesketh, A. C. Hillier, J. K. Hite, H. Imahori, M. Inaba, M. Innocenti, M. Itagaki, C. Johnson, H. Katayama, S. H. Kilgore, D. J. Kim, J. Koehne, R. Kostecki, G. Krumdick, P. J. Kulesza, J. Leddy, J. J. Lee, O. Leonte, Y. C. Lu, B. L. Lucht, R. P. Lynch, M. Manivannan, R. A. Mantz, P. Marcus, V. Maurice, M. Mauter, J. Mauzeroll, H. N. McMurray, Y. S. Meng, E. L. Miller, I. Milosev, S. D. Minteer, S. Mitra, S. Mukerjee, R. Mukundan, J. Muldoon, L. Nagahara, S. R. Narayan, P. M. Natishan, M. Navaei, J. D. Nicholas, J. Noel, S. S. Nonnenmann, C. O'Dwyer, M. E. Orazem, Y. Oren, J. G. Park, P. Pharkya, P. N. Pintauro, S. Pylypenko, K. Rajeshwar, R. P. Ramasamy, C. Rhodes, D. P. Riemer, D. Roeper, M. Rohwerder, L. Romankiw, S. V. Rotkin, J. L. M. Rupp, M. J. Sailor, D. T. Schwartz, P. K. Sekhar, N. Sharma, A. Simonian, D. K. Smith, K. C. Smith, L. Soleymani, G. R. Stafford, J. A. Staser, V. Subramanian, V. R. Subramanian, K. B. Sundaram, A. H. Suroviec, K. Suto, M. Tao, T. Tatsuma, P. C. Trulove, P. Vanysek, N. Vasiljevic, J. T. Vaughey, S. Virtanen, H. Wang, W. Wang, J. F. Whitacre, G. Williams, M. Winter, D. L. Wood, G. Wu, N. Wu, J. Xiao, Y. Xing, H. Xu, J. J. Yang, G. Zangari
PublisherElectrochemical Society Inc.
Pages923-931
Number of pages9
Edition10
ISBN (Electronic)9781607688273
ISBN (Print)9781623324797
DOIs
StatePublished - 2017
Externally publishedYes
Event232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number10
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference232nd ECS Meeting
Country/TerritoryUnited States
CityNational Harbor
Period10/1/1710/5/17

ASJC Scopus subject areas

  • Engineering(all)

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