The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.
- crossbar array
- non-volatile memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials