Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Ying Chen Chen, Yao Feng Chang, Chao Cheng Lin, Chang Hsien Lin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

Original languageEnglish (US)
Article number065011
JournalECS Journal of Solid State Science and Technology
Issue number6
StatePublished - Jun 2022


  • ReRAM
  • crossbar array
  • non-volatile memory
  • self-rectify

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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