Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Ying Chen Chen; Yao Feng Chang; Chao Cheng Lin; Chang Hsien Lin

doi:10.1149/2162-8777/ac71c5

Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Ying Chen Chen, Yao Feng Chang, Chao Cheng Lin, Chang Hsien Lin

Informatics, Computing, and Cyber Systems, School of

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

Original language	English (US)
Article number	065011
Journal	ECS Journal of Solid State Science and Technology
Volume	11
Issue number	6
DOIs	https://doi.org/10.1149/2162-8777/ac71c5
State	Published - Jun 2022

Keywords

ReRAM
crossbar array
non-volatile memory
self-rectify

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/ac71c5

Cite this

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title = "Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory",

abstract = "The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.",

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AU - Chen, Ying Chen

AU - Chang, Yao Feng

AU - Lin, Chao Cheng

AU - Lin, Chang Hsien

PY - 2022/6

Y1 - 2022/6

N2 - The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

AB - The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

KW - ReRAM

KW - crossbar array

KW - non-volatile memory

KW - self-rectify

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Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Abstract

Keywords

ASJC Scopus subject areas

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