Beyond SiOx: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria

Yao Feng Chang, Burt Fowler, Ying Chen Chen, Chih Yang Lin, Gaobo Xu, Hui Chun Huang, Jia Chen, Sungjun Kim, Yi Li, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We explore overcoming the non-oxidizing environment requirement issues in silicon oxide (SiOx) based memristors and investigate potential next steps for use of SiOx as a memristor material. A SiOx/HfOx stacked material was engineered, developed and tested to verify operation of the SiOx-based memristors, and the stacked material exhibits interfacial proton accumulation leading to ultra-low-voltage operation (<2 V). Also, a biomimetic self-recovery process (learning from the reactive oxygen species (ROS-like) production and regulation mechanism in mitochondria) has been demonstrated by a SiOx-based electrical device. The accumulative oxygen-induced ROS-like substance production in SiOx-based active electronics results in functional obstruction during the resistive switching transformation process, and further causes malfunction or a similar process to apoptosis (programmed cell death). The regulation system, also built-up by SiOx-based active electronics with neuromorphic learning, is designed for modulation of a ROS-like substance and provides an anti-ROS-like process to revive device functionality. The demonstrating of smart-material cycles in biomimetic self-recovery by SiOx-based active electronics represents critical milestones in future potential applications.

Original languageEnglish (US)
Pages (from-to)12788-12799
Number of pages12
JournalJournal of Materials Chemistry C
Volume6
Issue number47
DOIs
StatePublished - 2018
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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