We explore overcoming the non-oxidizing environment requirement issues in silicon oxide (SiOx) based memristors and investigate potential next steps for use of SiOx as a memristor material. A SiOx/HfOx stacked material was engineered, developed and tested to verify operation of the SiOx-based memristors, and the stacked material exhibits interfacial proton accumulation leading to ultra-low-voltage operation (<2 V). Also, a biomimetic self-recovery process (learning from the reactive oxygen species (ROS-like) production and regulation mechanism in mitochondria) has been demonstrated by a SiOx-based electrical device. The accumulative oxygen-induced ROS-like substance production in SiOx-based active electronics results in functional obstruction during the resistive switching transformation process, and further causes malfunction or a similar process to apoptosis (programmed cell death). The regulation system, also built-up by SiOx-based active electronics with neuromorphic learning, is designed for modulation of a ROS-like substance and provides an anti-ROS-like process to revive device functionality. The demonstrating of smart-material cycles in biomimetic self-recovery by SiOx-based active electronics represents critical milestones in future potential applications.
|Original language||English (US)|
|Number of pages||12|
|Journal||Journal of Materials Chemistry C|
|State||Published - 2018|
ASJC Scopus subject areas
- Materials Chemistry