BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Ying Chen Chen; Chao Cheng Lin; Chang Hsien Lin; Yao Feng Chang

doi:10.1109/TED.2023.3237508

BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Ying Chen Chen, Chao Cheng Lin, Chang Hsien Lin, Yao Feng Chang

Informatics, Computing, and Cyber Systems, School of

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement (fuse voltage trending with via size scaling), low fabrication complexity [via-fuse vs. gate-dielectric anti-fuse (AF)], and match with the current metal fuse technology ( > 2 V). In addition, an electrode engineered has been proposed to realize low programming voltage ( ∼ 1.9 V) in via-fuse OTP featuring by metal-insulator-metal advanced back-end-of-line (BEOL) process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied. Our results provide a pathfinding of high density, integration capability, low programming voltage, multifunctionality between programmable read-only memory (PROM), and resistive switching memory co-existing in future embedded applications.

Original language	English (US)
Pages (from-to)	1042-1047
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	3
DOIs	https://doi.org/10.1109/TED.2023.3237508
State	Published - Mar 1 2023

Keywords

Nonvolatile memory (NVM)
programmable read-only memory (PROM)
self-rectified memory
sneak path

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2023.3237508

Cite this

@article{9a5e1d812e934abb9d48c74e8f323bbc,

title = "BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation",

abstract = "In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement (fuse voltage trending with via size scaling), low fabrication complexity [via-fuse vs. gate-dielectric anti-fuse (AF)], and match with the current metal fuse technology ( > 2 V). In addition, an electrode engineered has been proposed to realize low programming voltage ( ∼ 1.9 V) in via-fuse OTP featuring by metal-insulator-metal advanced back-end-of-line (BEOL) process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied. Our results provide a pathfinding of high density, integration capability, low programming voltage, multifunctionality between programmable read-only memory (PROM), and resistive switching memory co-existing in future embedded applications.",

keywords = "Nonvolatile memory (NVM), programmable read-only memory (PROM), self-rectified memory, sneak path",

author = "Chen, {Ying Chen} and Lin, {Chao Cheng} and Lin, {Chang Hsien} and Chang, {Yao Feng}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = mar,

day = "1",

doi = "10.1109/TED.2023.3237508",

language = "English (US)",

volume = "70",

pages = "1042--1047",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

AU - Chen, Ying Chen

AU - Lin, Chao Cheng

AU - Lin, Chang Hsien

AU - Chang, Yao Feng

PY - 2023/3/1

Y1 - 2023/3/1

N2 - In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement (fuse voltage trending with via size scaling), low fabrication complexity [via-fuse vs. gate-dielectric anti-fuse (AF)], and match with the current metal fuse technology ( > 2 V). In addition, an electrode engineered has been proposed to realize low programming voltage ( ∼ 1.9 V) in via-fuse OTP featuring by metal-insulator-metal advanced back-end-of-line (BEOL) process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied. Our results provide a pathfinding of high density, integration capability, low programming voltage, multifunctionality between programmable read-only memory (PROM), and resistive switching memory co-existing in future embedded applications.

AB - In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement (fuse voltage trending with via size scaling), low fabrication complexity [via-fuse vs. gate-dielectric anti-fuse (AF)], and match with the current metal fuse technology ( > 2 V). In addition, an electrode engineered has been proposed to realize low programming voltage ( ∼ 1.9 V) in via-fuse OTP featuring by metal-insulator-metal advanced back-end-of-line (BEOL) process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied. Our results provide a pathfinding of high density, integration capability, low programming voltage, multifunctionality between programmable read-only memory (PROM), and resistive switching memory co-existing in future embedded applications.

KW - Nonvolatile memory (NVM)

KW - programmable read-only memory (PROM)

KW - self-rectified memory

KW - sneak path

UR - http://www.scopus.com/inward/record.url?scp=85147290057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85147290057&partnerID=8YFLogxK

U2 - 10.1109/TED.2023.3237508

DO - 10.1109/TED.2023.3237508

M3 - Article

AN - SCOPUS:85147290057

SN - 0018-9383

VL - 70

SP - 1042

EP - 1047

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this