BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Ying Chen Chen, Chao Cheng Lin, Chang Hsien Lin, Yao Feng Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement (fuse voltage trending with via size scaling), low fabrication complexity [via-fuse vs. gate-dielectric anti-fuse (AF)], and match with the current metal fuse technology ( > 2 V). In addition, an electrode engineered has been proposed to realize low programming voltage ( ∼ 1.9 V) in via-fuse OTP featuring by metal-insulator-metal advanced back-end-of-line (BEOL) process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied. Our results provide a pathfinding of high density, integration capability, low programming voltage, multifunctionality between programmable read-only memory (PROM), and resistive switching memory co-existing in future embedded applications.

Original languageEnglish (US)
Pages (from-to)1042-1047
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 1 2023


  • Nonvolatile memory (NVM)
  • programmable read-only memory (PROM)
  • self-rectified memory
  • sneak path

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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