BC high-κ/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates

David Q. Kelly, Joseph P. Donnelly, Sagnik Dey, Sachin V. Joshi, Domingo I. García Gutiérrez, Miguel José Yacamán, Sanjay K. Banerjee

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Buried-channel (BC) high-κ/metal gate pMOSFETs were fabricated on Ge1-xCx layers for the first time. Ge1-x Cx was grown directly on Si (100) by ultrahigh-vacuum chemical vapor deposition using methylgermane (CH3GeH3) and germane (GeH4) precursors at 450 °C and 5 mtorr. High-quality films were achieved with a very low root-mean-square roughness of 3 Å measured by atomic force microscopy. The carbon (C) content in the Ge1-xCx layer was approximately 1 at.% as measured by secondary ion mass spectrometry. Ge1-x Cx BC pMOSFETs with an effective oxide thickness of 1.9 nm and a gate length of 10 μm exhibited high saturation drain current of 10.8 μA/μm for a gate voltage overdrive of -1.0 V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in the saturation drain current and 1.6× enhancement in the transconductance. The Ion/Ioff ratio was greater than 5 × 104. The improved drain current represented an effective hole mobility enhancement of 1.5× over the universal mobility curve for Si.

Original languageEnglish (US)
Pages (from-to)265-268
Number of pages4
JournalIEEE Electron Device Letters
Volume27
Issue number4
DOIs
StatePublished - Apr 2006
Externally publishedYes

Keywords

  • Germanium (Ge)
  • Germanium/carbon alloy (GeC)
  • Methylgermane (CHGeH
  • Mobility
  • MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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