BC high-κ/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates

David Q. Kelly; Joseph P. Donnelly; Sagnik Dey; Sachin V. Joshi; Domingo I. García Gutiérrez; Miguel José Yacamán; Sanjay K. Banerjee

doi:10.1109/LED.2006.870866

BC high-κ/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates

David Q. Kelly, Joseph P. Donnelly, Sagnik Dey, Sachin V. Joshi, Domingo I. García Gutiérrez, Miguel José Yacamán, Sanjay K. Banerjee

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Buried-channel (BC) high-κ/metal gate pMOSFETs were fabricated on Ge_1-xC_x layers for the first time. Ge_1-x C_x was grown directly on Si (100) by ultrahigh-vacuum chemical vapor deposition using methylgermane (CH₃GeH₃) and germane (GeH₄) precursors at 450 °C and 5 mtorr. High-quality films were achieved with a very low root-mean-square roughness of 3 Å measured by atomic force microscopy. The carbon (C) content in the Ge_1-xC_x layer was approximately 1 at.% as measured by secondary ion mass spectrometry. Ge_1-x C_x BC pMOSFETs with an effective oxide thickness of 1.9 nm and a gate length of 10 μm exhibited high saturation drain current of 10.8 μA/μm for a gate voltage overdrive of -1.0 V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in the saturation drain current and 1.6× enhancement in the transconductance. The I_on/I_off ratio was greater than 5 × 10⁴. The improved drain current represented an effective hole mobility enhancement of 1.5× over the universal mobility curve for Si.

Original language	English (US)
Pages (from-to)	265-268
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	27
Issue number	4
DOIs	https://doi.org/10.1109/LED.2006.870866
State	Published - Apr 2006
Externally published	Yes

Keywords

Germanium (Ge)
Germanium/carbon alloy (GeC)
MOSFET
Methylgermane (CHGeH
Mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.870866

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@article{5478f9fe5a244a559013d941017f1ea2,

title = "BC high-κ/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates",

abstract = "Buried-channel (BC) high-κ/metal gate pMOSFETs were fabricated on Ge1-xCx layers for the first time. Ge1-x Cx was grown directly on Si (100) by ultrahigh-vacuum chemical vapor deposition using methylgermane (CH3GeH3) and germane (GeH4) precursors at 450 °C and 5 mtorr. High-quality films were achieved with a very low root-mean-square roughness of 3 {\AA} measured by atomic force microscopy. The carbon (C) content in the Ge1-xCx layer was approximately 1 at.% as measured by secondary ion mass spectrometry. Ge1-x Cx BC pMOSFETs with an effective oxide thickness of 1.9 nm and a gate length of 10 μm exhibited high saturation drain current of 10.8 μA/μm for a gate voltage overdrive of -1.0 V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in the saturation drain current and 1.6× enhancement in the transconductance. The Ion/Ioff ratio was greater than 5 × 104. The improved drain current represented an effective hole mobility enhancement of 1.5× over the universal mobility curve for Si.",

keywords = "Germanium (Ge), Germanium/carbon alloy (GeC), MOSFET, Methylgermane (CHGeH, Mobility",

author = "Kelly, {David Q.} and Donnelly, {Joseph P.} and Sagnik Dey and Joshi, {Sachin V.} and {Garc{\'i}a Guti{\'e}rrez}, {Domingo I.} and Yacam{\'a}n, {Miguel Jos{\'e}} and Banerjee, {Sanjay K.}",

note = "Funding Information: Manuscript received November 21, 2005; revised January 18, 2006. This work was supported in part by the Semiconductor Research Corporation (SRC), the Advanced Materials Research Center (AMRC), TATP, Texas Instruments Incorporated, and the Micron Foundation. The review of this letter was arranged by Editor B. Yu.",

year = "2006",

month = apr,

doi = "10.1109/LED.2006.870866",

language = "English (US)",

volume = "27",

pages = "265--268",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - BC high-κ/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates

AU - Kelly, David Q.

AU - Donnelly, Joseph P.

AU - Dey, Sagnik

AU - Joshi, Sachin V.

AU - García Gutiérrez, Domingo I.

AU - Yacamán, Miguel José

AU - Banerjee, Sanjay K.

N1 - Funding Information: Manuscript received November 21, 2005; revised January 18, 2006. This work was supported in part by the Semiconductor Research Corporation (SRC), the Advanced Materials Research Center (AMRC), TATP, Texas Instruments Incorporated, and the Micron Foundation. The review of this letter was arranged by Editor B. Yu.

PY - 2006/4

Y1 - 2006/4

N2 - Buried-channel (BC) high-κ/metal gate pMOSFETs were fabricated on Ge1-xCx layers for the first time. Ge1-x Cx was grown directly on Si (100) by ultrahigh-vacuum chemical vapor deposition using methylgermane (CH3GeH3) and germane (GeH4) precursors at 450 °C and 5 mtorr. High-quality films were achieved with a very low root-mean-square roughness of 3 Å measured by atomic force microscopy. The carbon (C) content in the Ge1-xCx layer was approximately 1 at.% as measured by secondary ion mass spectrometry. Ge1-x Cx BC pMOSFETs with an effective oxide thickness of 1.9 nm and a gate length of 10 μm exhibited high saturation drain current of 10.8 μA/μm for a gate voltage overdrive of -1.0 V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in the saturation drain current and 1.6× enhancement in the transconductance. The Ion/Ioff ratio was greater than 5 × 104. The improved drain current represented an effective hole mobility enhancement of 1.5× over the universal mobility curve for Si.

AB - Buried-channel (BC) high-κ/metal gate pMOSFETs were fabricated on Ge1-xCx layers for the first time. Ge1-x Cx was grown directly on Si (100) by ultrahigh-vacuum chemical vapor deposition using methylgermane (CH3GeH3) and germane (GeH4) precursors at 450 °C and 5 mtorr. High-quality films were achieved with a very low root-mean-square roughness of 3 Å measured by atomic force microscopy. The carbon (C) content in the Ge1-xCx layer was approximately 1 at.% as measured by secondary ion mass spectrometry. Ge1-x Cx BC pMOSFETs with an effective oxide thickness of 1.9 nm and a gate length of 10 μm exhibited high saturation drain current of 10.8 μA/μm for a gate voltage overdrive of -1.0 V. Compared to Si control devices, the BC pMOSFETs showed 2× enhancement in the saturation drain current and 1.6× enhancement in the transconductance. The Ion/Ioff ratio was greater than 5 × 104. The improved drain current represented an effective hole mobility enhancement of 1.5× over the universal mobility curve for Si.

KW - Germanium (Ge)

KW - Germanium/carbon alloy (GeC)

KW - MOSFET

KW - Methylgermane (CHGeH

KW - Mobility

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U2 - 10.1109/LED.2006.870866

DO - 10.1109/LED.2006.870866

M3 - Article

AN - SCOPUS:33645643412

SN - 0741-3106

VL - 27

SP - 265

EP - 268

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

BC high-κ/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates

Abstract

Keywords

ASJC Scopus subject areas

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