Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
- Chih Yang Lin
- , Po Hsun Chen
- , Ting Chang Chang
- , Kuan Chang Chang
- , Sheng Dong Zhang
- , Tsung Ming Tsai
- , Chih Hung Pan
- , Min Chen Chen
- , Yu Ting Su
- , Yi Ting Tseng
- , Yao Feng Chang
- , Ying Chen Chen
- , Hui Chun Huang
- , Simon M. Sze
Research output: Contribution to journal › Article › peer-review
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