Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode

Chih Yang Lin, Po Hsun Chen, Ting Chang Chang, Kuan Chang Chang, Sheng Dong Zhang, Tsung Ming Tsai, Chih Hung Pan, Min Chen Chen, Yu Ting Su, Yi Ting Tseng, Yao Feng Chang, Ying Chen Chen, Hui Chun Huang, Simon M. Sze