Atomic Resolution in MoS2 Few Layered using Cs-corrected STEM at 80 kV

A. Ponce; R. Esparza; A. Garcia; M. Jose Yacaman

doi:10.1017/S1431927612009051

Atomic Resolution in MoS2 Few Layered using Cs-corrected STEM at 80 kV

A. Ponce, R. Esparza, A. Garcia, M. Jose Yacaman

Research output: Contribution to journal › Article › peer-review

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Original language	English (US)
Pages (from-to)	1440-1441
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
Issue number	S2
DOIs	https://doi.org/10.1017/S1431927612009051
State	Published - Jul 2012
Externally published	Yes

ASJC Scopus subject areas

Instrumentation

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title = "Atomic Resolution in MoS2 Few Layered using Cs-corrected STEM at 80 kV",

abstract = "Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.",

author = "A. Ponce and R. Esparza and A. Garcia and {Jose Yacaman}, M.",

year = "2012",

month = jul,

doi = "10.1017/S1431927612009051",

language = "English (US)",

volume = "18",

pages = "1440--1441",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

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AU - Ponce, A.

AU - Esparza, R.

AU - Garcia, A.

AU - Jose Yacaman, M.

PY - 2012/7

Y1 - 2012/7

N2 - Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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DO - 10.1017/S1431927612009051

M3 - Article

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JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - S2

ER -

Atomic Resolution in MoS2 Few Layered using Cs-corrected STEM at 80 kV

Abstract

ASJC Scopus subject areas

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