Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

J. J. Wierer; I. Montaño; M. H. Crawford; A. A. Allerman

Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

J. J. Wierer, I. Montaño, M. H. Crawford, A. A. Allerman

Research output: Contribution to conference › Paper › peer-review

Abstract

Quantum-size effects strongly influence the valance band and optical polarization of 275nm emitting Al0.44Ga0.56N layers. It's shown experimentally and theoretically that thinner quantum wells and lower carrier densities result in polarization preferential for light extraction.

Original language	English (US)
State	Published - 2014
Externally published	Yes
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Conference

Conference	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	6/8/14 → 6/13/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

@conference{d77abdf7f1c94438a019ea19dbcb3ce1,

title = "Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects",

abstract = "Quantum-size effects strongly influence the valance band and optical polarization of 275nm emitting Al0.44Ga0.56N layers. It's shown experimentally and theoretically that thinner quantum wells and lower carrier densities result in polarization preferential for light extraction.",

author = "Wierer, {J. J.} and I. Monta{\~n}o and Crawford, {M. H.} and Allerman, {A. A.}",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.; 2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

language = "English (US)",

}

TY - CONF

T1 - Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

AU - Wierer, J. J.

AU - Montaño, I.

AU - Crawford, M. H.

AU - Allerman, A. A.

PY - 2014

Y1 - 2014

N2 - Quantum-size effects strongly influence the valance band and optical polarization of 275nm emitting Al0.44Ga0.56N layers. It's shown experimentally and theoretically that thinner quantum wells and lower carrier densities result in polarization preferential for light extraction.

AB - Quantum-size effects strongly influence the valance band and optical polarization of 275nm emitting Al0.44Ga0.56N layers. It's shown experimentally and theoretically that thinner quantum wells and lower carrier densities result in polarization preferential for light extraction.

UR - http://www.scopus.com/inward/record.url?scp=84944699358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944699358&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84944699358

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

Abstract

Conference

ASJC Scopus subject areas

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