Abstract
In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200kV. Structural damage of the MoS2 sheets has been controlled at 80kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron-matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers.
Original language | English (US) |
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Pages (from-to) | 33-38 |
Number of pages | 6 |
Journal | Ultramicroscopy |
Volume | 146 |
DOIs | |
State | Published - Nov 2014 |
Externally published | Yes |
Keywords
- Aberration-corrected microscopy
- Low-voltage transmission electron microscopy
- Molybdenum disulfide
- Radiation damage
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation