Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

Alejandra Garcia, Andres M. Raya, Marcelo M. Mariscal, Rodrigo Esparza, Miriam Herrera, Sergio I. Molina, Giovanni Scavello, Pedro L. Galindo, Miguel Jose-Yacaman, Arturo Ponce

Research output: Contribution to journalArticlepeer-review

63 Scopus citations


In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200kV. Structural damage of the MoS2 sheets has been controlled at 80kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron-matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers.

Original languageEnglish (US)
Pages (from-to)33-38
Number of pages6
StatePublished - Nov 2014
Externally publishedYes


  • Aberration-corrected microscopy
  • Low-voltage transmission electron microscopy
  • Molybdenum disulfide
  • Radiation damage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation


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