Ambient Effects on Reprogrammable Read-only Selector-free Memory for the Embedded NVM Applications

Ying Chen Chen, Justin Stouffer, Favian Villanueva, Jordan Beverly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


With the high demand of computing, the development of emerging memory technology with high density crossbar memory array is widely investigated for fulfilling the high demand on future applications, e.g. artificial intelligence, internet-of-things (IoT), edge computing, sensing with storage etc [1]-[3]. In the array, the sneak path current (SPC) is an inevitable problem subverting the read/write margin with the crossbar configuration, where the leakage current from neighboring cells results in operation errors. The 1T-1 R or 1 S-I M configuration with good sneak path current suppressing ability is utilized, while with high cost and fabrication complexity (Fig. 1(a) left/top). To reduce the SPC with cost efficiency, the self-rectified selector-free memory with thin film stacking fabrication is presented as the highly scalable non-volatile memory for storage and computing configurations (Fig. 1(a)). Furthermore, the RRAM can be utilized as the reprogrammable one-time programming (OTP) memory (i.e. read-only) for the embedded hardware security applications.

Original languageEnglish (US)
Title of host publication2022 Device Research Conference, DRC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665498838
StatePublished - 2022
Event2022 Device Research Conference, DRC 2022 - Columbus, United States
Duration: Jun 26 2022Jun 29 2022

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2022 Device Research Conference, DRC 2022
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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