With the high demand of computing, the development of emerging memory technology with high density crossbar memory array is widely investigated for fulfilling the high demand on future applications, e.g. artificial intelligence, internet-of-things (IoT), edge computing, sensing with storage etc -. In the array, the sneak path current (SPC) is an inevitable problem subverting the read/write margin with the crossbar configuration, where the leakage current from neighboring cells results in operation errors. The 1T-1 R or 1 S-I M configuration with good sneak path current suppressing ability is utilized, while with high cost and fabrication complexity (Fig. 1(a) left/top). To reduce the SPC with cost efficiency, the self-rectified selector-free memory with thin film stacking fabrication is presented as the highly scalable non-volatile memory for storage and computing configurations (Fig. 1(a)). Furthermore, the RRAM can be utilized as the reprogrammable one-time programming (OTP) memory (i.e. read-only) for the embedded hardware security applications.