Abstract
A new numerical method for semiconductor device simulation is presented. The additive decomposition method has been successfully applied to Burgers' and Navier-Stokes equations governing turbulent fluid flow by decomposing the equations into large-scale and small-scale parts without averaging. The additive decomposition (AD) technique is well suited to problems with a large range of time and/or space scales, for example, thermal-electrical simulation of power semiconductor devices with large physical size. Furthermore, AD adds a level of parallelization for improved computational efficiency. The new numerical technique has been tested on the 1-D drift-diffusion model of a p-i-n diode for reverse and forward biases. Distributions of ø, n and p have been calculated using the AD method on a coarse large-scale grid and then in parallel small-scale grid sections. The AD results agreed well with the results obtained with a traditional one-grid approach, while potentially reducing memory requirements with the new method.
Original language | English (US) |
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Pages (from-to) | 393-399 |
Number of pages | 7 |
Journal | VLSI Design |
Volume | 8 |
Issue number | 1-4 |
DOIs | |
State | Published - 1998 |
Keywords
- Drift-diffusion, decomposition
- Numerical methods
- Semiconductor
- Simulation
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering