A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory

Yao Feng Chang, Burt Fowler, Ying Chen Chen, Fei Zhou, Chih Hung Pan, Kuan Chang Chang, Tsung Ming Tsai, Ting Chang Chang, Simon M. Sze, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

Original languageEnglish (US)
Title of host publicationNano Devices and Sensors
Publisherde Gruyter
Pages91-112
Number of pages22
ISBN (Electronic)9781501501531
ISBN (Print)9781501510502
DOIs
StatePublished - Jan 1 2016
Externally publishedYes

Keywords

  • 1d-1r
  • Resistive switching
  • Silicon oxide
  • Synaptic device

ASJC Scopus subject areas

  • General Engineering

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