A study of the relationship between endurance and retention reliability for a HfO-based resistive switching memory

Keyphrases

• Resistive Random Access Memory (ReRAM) 100%
• HfOx 66%
• High Resistance State 66%
• High Temperature 33%
• Endurance Test 33%
• Thermally Induced 33%
• Retention Behavior 33%
• Retention Test 33%
• Stacked Structure 33%
• Design Guidance 33%
• Refresh Cycle 33%
• I-V Characteristics 33%
• State Retention 33%
• Degradation Model 33%
• Continuous Filament 33%
• Memory Reliability 33%
• Isothermal Heat Treatment 33%
• Oxygen Vacancy Filament 33%

Engineering

• Resistive 100%
• Resistive Random Access Memory 100%
• High Resistance State 100%
• Isothermal 50%
• Test Procedure 50%
• Oxygen Vacancy 50%
• Continuous Filament 50%
• Current-Voltage Characteristic 50%
• Degradation Model 50%
• Design Guidance 50%
• Feasible State 50%

Material Science

• Resistive Random-Access Memory 100%
• Oxygen Vacancy 50%
• Current-Voltage Characteristic 50%