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A study of the relationship between endurance and retention reliability for a HfO-based resistive switching memory

  • Wei Min Chung
  • , Yao Feng Chang
  • , Yu Lin Hsu
  • , Y. C.Daphne Chen
  • , Chao Cheng Lin
  • , Chang Hsieh Lin
  • , Jihperng Leu

Research output: Contribution to journal › Article › peer-review

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