A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

Fei Zhou, Yao Feng Chang, Ying Chen Chen, Xiaohan Wu, Ye Zhang, Burt Fowler, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

In this work, we investigated SiOx-based interfacial resistive switching in planar metal-insulator-metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiOx, and also shows the potential for high temperature operation in future nonvolatile memory applications.

Original languageEnglish (US)
Pages (from-to)700-703
Number of pages4
JournalPhysical Chemistry Chemical Physics
Volume18
Issue number2
DOIs
StatePublished - Nov 25 2015
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry

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