In this work, we investigated SiOx-based interfacial resistive switching in planar metal-insulator-metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiOx, and also shows the potential for high temperature operation in future nonvolatile memory applications.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Chemistry Chemical Physics|
|State||Published - Nov 25 2015|
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry