A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

Fei Zhou; Yao Feng Chang; Ying Chen Chen; Xiaohan Wu; Ye Zhang; Burt Fowler; Jack C. Lee

doi:10.1039/c5cp06507k

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO_x layer

Fei Zhou, Yao Feng Chang, Ying Chen Chen, Xiaohan Wu, Ye Zhang, Burt Fowler, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this work, we investigated SiO_x-based interfacial resistive switching in planar metal-insulator-metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiO_x, and also shows the potential for high temperature operation in future nonvolatile memory applications.

Original language	English (US)
Pages (from-to)	700-703
Number of pages	4
Journal	Physical Chemistry Chemical Physics
Volume	18
Issue number	2
DOIs	https://doi.org/10.1039/c5cp06507k
State	Published - Nov 25 2015
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1039/c5cp06507k

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abstract = "In this work, we investigated SiOx-based interfacial resistive switching in planar metal-insulator-metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiOx, and also shows the potential for high temperature operation in future nonvolatile memory applications.",

author = "Fei Zhou and Chang, {Yao Feng} and Chen, {Ying Chen} and Xiaohan Wu and Ye Zhang and Burt Fowler and Lee, {Jack C.}",

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AU - Chen, Ying Chen

AU - Wu, Xiaohan

AU - Zhang, Ye

AU - Fowler, Burt

AU - Lee, Jack C.

PY - 2015/11/25

Y1 - 2015/11/25

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AB - In this work, we investigated SiOx-based interfacial resistive switching in planar metal-insulator-metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiOx, and also shows the potential for high temperature operation in future nonvolatile memory applications.

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A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO_x layer

Abstract

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