A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

C. Y. Lin; P. H. Chen; T. C. Chang; W. C. Huang; Y. F. Tan; Y. H. Lin; W. C. Chen; C. C. Lin; Y. F. Chang; Y. C. Chen; H. C. Huang; X. H. Ma; Y. Hao; S. M. Sze

doi:10.1016/j.mtphys.2020.100201

A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

C. Y. Lin
, P. H. Chen
, T. C. Chang
, W. C. Huang
, Y. F. Tan
, Y. H. Lin
, W. C. Chen
, C. C. Lin
, Y. F. Chang
, Y. C. Chen
, H. C. Huang
, X. H. Ma
, Y. Hao
, S. M. Sze

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbO_x, NiO_x, VO_x, and TaS₂), vanadium oxide–based selectors have been widely investigated because of their high switching speed (~10-ns transition time), sufficient non-linearity (>10³), and endurance stability (~10¹⁰). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 10⁷ at 65 °C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal–oxide–semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future.

Original language	English (US)
Article number	100201
Journal	Materials Today Physics
Volume	13
DOIs	https://doi.org/10.1016/j.mtphys.2020.100201
State	Published - Jun 2020
Externally published	Yes

Keywords

Electrode
Metal-insulator transition
Schottky thermal emission
Selector
Threshold switching
Vanadium oxide

ASJC Scopus subject areas

General Materials Science
Energy (miscellaneous)
Physics and Astronomy (miscellaneous)

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10.1016/j.mtphys.2020.100201

Cite this

Lin, C. Y., Chen, P. H., Chang, T. C., Huang, W. C., Tan, Y. F., Lin, Y. H., Chen, W. C., Lin, C. C., Chang, Y. F., Chen, Y. C., Huang, H. C., Ma, X. H., Hao, Y., & Sze, S. M. (2020). A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices. Materials Today Physics, 13, Article 100201. https://doi.org/10.1016/j.mtphys.2020.100201

@article{448b3f61acee472f99d06910fa206d84,

title = "A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices",

abstract = "In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide–based selectors have been widely investigated because of their high switching speed (\textasciitilde{}10-ns transition time), sufficient non-linearity (>103), and endurance stability (\textasciitilde{}1010). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 107 at 65 °C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal–oxide–semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future.",

keywords = "Electrode, Metal-insulator transition, Schottky thermal emission, Selector, Threshold switching, Vanadium oxide",

author = "Lin, \{C. Y.\} and Chen, \{P. H.\} and Chang, \{T. C.\} and Huang, \{W. C.\} and Tan, \{Y. F.\} and Lin, \{Y. H.\} and Chen, \{W. C.\} and Lin, \{C. C.\} and Chang, \{Y. F.\} and Chen, \{Y. C.\} and Huang, \{H. C.\} and Ma, \{X. H.\} and Y. Hao and Sze, \{S. M.\}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = jun,

doi = "10.1016/j.mtphys.2020.100201",

language = "English (US)",

volume = "13",

journal = "Materials Today Physics",

issn = "2542-5293",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

AU - Lin, C. Y.

AU - Chen, P. H.

AU - Chang, T. C.

AU - Huang, W. C.

AU - Tan, Y. F.

AU - Lin, Y. H.

AU - Chen, W. C.

AU - Lin, C. C.

AU - Chang, Y. F.

AU - Chen, Y. C.

AU - Huang, H. C.

AU - Ma, X. H.

AU - Hao, Y.

AU - Sze, S. M.

PY - 2020/6

Y1 - 2020/6

N2 - In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide–based selectors have been widely investigated because of their high switching speed (~10-ns transition time), sufficient non-linearity (>103), and endurance stability (~1010). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 107 at 65 °C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal–oxide–semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future.

AB - In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide–based selectors have been widely investigated because of their high switching speed (~10-ns transition time), sufficient non-linearity (>103), and endurance stability (~1010). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 107 at 65 °C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal–oxide–semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future.

KW - Electrode

KW - Metal-insulator transition

KW - Schottky thermal emission

KW - Selector

KW - Threshold switching

KW - Vanadium oxide

UR - https://www.scopus.com/pages/publications/85082413706

UR - https://www.scopus.com/pages/publications/85082413706#tab=citedBy

U2 - 10.1016/j.mtphys.2020.100201

DO - 10.1016/j.mtphys.2020.100201

M3 - Article

AN - SCOPUS:85082413706

SN - 2542-5293

VL - 13

JO - Materials Today Physics

JF - Materials Today Physics

M1 - 100201

ER -

A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

Abstract

Keywords

ASJC Scopus subject areas

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