A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

C. Y. Lin, P. H. Chen, T. C. Chang, W. C. Huang, Y. F. Tan, Y. H. Lin, W. C. Chen, C. C. Lin, Y. F. Chang, Y. C. Chen, H. C. Huang, X. H. Ma, Y. Hao, S. M. Sze

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide–based selectors have been widely investigated because of their high switching speed (~10-ns transition time), sufficient non-linearity (>103), and endurance stability (~1010). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 107 at 65 °C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal–oxide–semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future.

Original languageEnglish (US)
Article number100201
JournalMaterials Today Physics
Volume13
DOIs
StatePublished - Jun 2020
Externally publishedYes

Keywords

  • Electrode
  • Metal-insulator transition
  • Schottky thermal emission
  • Selector
  • Threshold switching
  • Vanadium oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Energy (miscellaneous)
  • Physics and Astronomy (miscellaneous)

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